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1

[IEEE 2015 IEEE Energy Conversion Congress and Exposition - Montreal, QC, Canada (2015.9.20-2015.9.24)] 2015 IEEE Energy Conversion Congress and Exposition (ECCE) - 900V silicon carbide MOSFETs for breakthrough power supply design

Pala, Vipindas, Barkley, Adam, Hull, Brett, Wang, Gangyao, Ryu, Sei-Hyung, Van Brunt, Edward, Lichtenwalner, Daniel, Richmond, Jim, Jonas, Charlotte, Capell, Craig, Allen, Scott, Casady, Jeffrey, Grid

Year:

2015

Language:

english

File:

PDF, 872 KB

english, 2015

2

15 kV n-GTOs in 4H-SiC

Ryu, Sei Hyung, Lichtenwalner, Daniel J., O’Loughlin, Michael, Capell, Craig, Richmond, Jim, van Brunt, Edward, Jonas, Charlotte, Lemma, Yemane, Burk, Al, Hull, Brett, McCain, Matthew, Sabri, Shadi, O

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 1.76 MB

2019

3

Critical Technical Issues in High Voltage SiC Power Devices

Agarwal, Anant, Burk, Al A., Callanan, Robert, Capell, Craig, Das, Mrinal K., Haney, Sarah K., Hull, Brett A., Jonas, Charlotte, O'Loughlin, Michael J., O`Neil, Michael, Palmour, John W., Powell, Adri

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 3.56 MB

english, 2009

4

[IEEE 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach, CA, USA (2016.3.20-2016.3.24)] 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Record-low 10mΩ SiC MOSFETs in TO-247, rated at 900V

Pala, Vipindas, Wang, Gangyao, Hull, Brett, Allen, Scott, Casady, Jeff, Palmour, John

Year:

2016

Language:

english

File:

PDF, 1.11 MB

english, 2016

5

High Switching Performance of 1700V, 50A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

Hazra, Samir, De, Ankan, Cheng, Lin, Palmour, John, Schupbach, Marcelo, Hull, Brett, Allen, Scott, Bhattacharya, Subhashish

Journal:

IEEE Transactions on Power Electronics

Year:

2015

Language:

english

File:

PDF, 1.02 MB

english, 2015

6

[IEEE Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting - Tampa, FL (2006.10.8-2006.10.8)] Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting - Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Devices

Hefner, Allen, Ryu, Sei-hyung, Hull, Brett, Berning, David, Hood, Colleen, Ortiz-rodriguez, Jose, Rivera-Lopez, Angel, Duong, Tam, Akuffo, Adwoa, Hernandez-Mora, Madelaine

Year:

2006

Language:

english

File:

PDF, 659 KB

english, 2006

7

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Operation of 4H-SiC Schottky diodes at dV/dt values over 700 kV/μs

Van Brunt, Edward, Wang, Gangyao, Liu, Jimmy, Pala, Vipindas, Hull, Brett, Richmond, Jim, Palmour, John

Year:

2016

Language:

english

File:

PDF, 569 KB

english, 2016

8

[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs

Van Brunt, Edward, Lichtenwalner, Daniel J., Leonard, Robert, Burk, Al, Sabri, Shadi, Hull, Brett, Allen, Scott, Palmour, John W.

Year:

2017

File:

PDF, 817 KB

2017

9

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

Allen, Scott, Pala, Vipindas, VanBrunt, E., Hull, Brett, Cheng, Lin, Ryu, S., Richmond, Jim, O’Loughlin, M., Burk, Al, Palmour, J.

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1.11 MB

english, 2015

10

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Status of 1200V 4H-SiC Power DMOSFETs

Hull, Brett A., Das, Mrinal K., Sei-Hyung Ryu,, Haney, Sarah K., Jonas, Charlotte, Capell, Craig, Hall, Len, Richmond, Jim, Callanan, Robert, Husna, Fatima, Agarwal, Anant, Lelis, Aivars, Geil, Bruce

Year:

2007

Language:

english

File:

PDF, 95 KB

english, 2007

11

[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Reliability studies of SiC vertical power MOSFETs

Lichtenwalner, Daniel J., Hull, Brett, Van Brunt, Edward, Sabri, Shadi, Gajewski, Donald A., Grider, Dave, Allen, Scott, Palmour, John W., Akturk, Akin, McGarrity, James

Year:

2018

Language:

english

File:

PDF, 929 KB

english, 2018

12

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

Hull, Brett A., Sumakeris, Joseph J., O'Loughlin, Michael J., Zhang, Jon, Richmond, James, Powell, Adrian R., Paisley, Michael J., Tsvetkov, Valeri F., Hefner, A., Rivera, Angel

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 1.06 MB

english, 2009

13

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Latest results on 1200 V 4H-SiC CIMOSFETs with Rsp, on of 3.9 mΩ·cm2 at 150°C

Zhang, Qingchun Jon, Wang, Gangyao, Doan, Huy, Ryu, Sei-Hyung, Hull, Brett, Young, Jonathan, Allen, Scott, Palmour, John

Year:

2015

File:

PDF, 689 KB

2015

14

[IEEE 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, OH (2017.10.1-2017.10.5)] 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Impact of next-generation 1700V SiC MOSFETs in a 125kW PV converter

Zhang, Jon, Rees, Fenton L., Hull, Brett, Casady, Jeffrey B., Allen, Scott, Palmour, John W.

Year:

2017

Language:

english

File:

PDF, 1.06 MB

english, 2017

15

[IEEE 2017 IEEE 5th Workshop on Wide-Bandgap Power Devices and Applications (WiPDA) - Albuquerque, NM (2017.10.30-2017.11.1)] 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - New generation 6.5 kV SiC power MOSFET

Sabri, Shadi, Van Brunt, Edward, Barkley, Adam, Hull, Brett, O'Loughlin, Michael, Burk, Al, Allen, Scott, Palmour, John

Year:

2017

Language:

english

File:

PDF, 1012 KB

english, 2017

16

[IEEE ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Santa Barbara, CA, USA (May 23-26, 2005)] Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Ultra High Power 10 kV, 50 A SiC PiN Diodes

Mrinal K. Dasa, Brett A. Hull

Year:

2005

Language:

english

File:

PDF, 748 KB

english, 2005

17

[IEEE 2011 IEEE Applied Power Electronics Conference and Exposition - APEC 2011 - Fort Worth, TX, USA (2011.03.6-2011.03.11)] 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) - 1700V 4H-SiC MOSFETs and Schottky diodes for next generation power conversion applications

Hull, Brett A., Henning, Jason, Jonas, Charlotte, Callanan, Robert, Olmedo, Anthony, Sousa, Rich, Solovey, James M.

Year:

2011

Language:

english

File:

PDF, 1.81 MB

english, 2011

18

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Hull, Brett A., Ryu, Sei Hyung, Zhang, Jon, Jonas, Charlotte, O'Loughlin, Michael J., Callanan, Robert, Palmour, John

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 752 KB

english, 2011

19

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Surge current failure mechanisms in 4H-SiC JBS rectifiers

Van Brunt, Edward, Barbieri, Thomas, Barkley, Adam, Solovey, Jim, Richmond, Jim, Hull, Brett

Year:

2018

Language:

english

File:

PDF, 1.30 MB

english, 2018

20

Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse

Michael E. Levinshtein, Pavel A. Ivanov, Tigran T. Mnatsakanov, John W. Palmour, Mrinal K. Das, Brett A. Hull

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 227 KB

english, 2008

21

Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes

Michael E. Levinshtein, Tigran T. Mnatsakanov, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das, Brett A. Hull

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 340 KB

english, 2007

22

Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Ryu, Sei Hyung, Krishnaswami, Sumi, Hull, Brett A., Heath, Bradley, Das, Mrinal K., Richmond, James, Agarwal, Anant, Palmour, John W., Scofield, James D.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 264 KB

english, 2006

23

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Stahlbush, Robert E., Mahadik, Nadeemullah A., Zhang, Q. Jon, Burk, Albert A., Hull, Brett A., Young, Jonathan

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1023 KB

english, 2015

24

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Ryu, Sei Hyung, Hull, Brett A., Dhar, Sarit, Cheng, L., Zhang, Qing Chun, Richmond, Jim, Das, Mrinal K., Agarwal, Anant, Palmour, John, Lelis, Aivars J., Geil, Bruce, Scozzie, Charles

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 771 KB

english, 2010

25

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed

Zhang, Q.J., Wang, G., Jonas, Charlotte, Capell, Craig, Pickle, Steve, Butler, P., Lichtenwalner, Daniel J., van Brunt, Edward, Ryu, Sei Hyung, Richmond, Jim, Hull, Brett, Casady, Jeff, Allen, Scott,

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 1.89 MB

english, 2017

26

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

Lichtenwalner, Daniel J., Sabri, Shadi, Van Brunt, Edward, Hull, Brett, Ryu, Sei Hyung, Steinmann, Philipp, Romero, Amy, Park, Jae Hyung, Ganguly, Satyaki, Gajewski, Donald A., Richmond, Jim, Allen, S

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 584 KB

2020

27

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

Gajewski, Donald A., Ryu, Sei Hyung, Das, Mrinal, Hull, Brett, Young, Jonathan, Palmour, John W.

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 326 KB

english, 2014

28

[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - State of the Art 10 kV NMOS Transistors

Das, Mrinal K., Callanan, Robert, Capell, D. Craig, Hull, Brett, Husna, Fatima, Richmond, James, O'loughlin, Michael, Paisley, Michael J., Powell, Adrian, Zhang, Qingchun

Year:

2008

Language:

english

File:

PDF, 184 KB

english, 2008

29

High power 4H–SiC pin diodes (10 kV class) with record high carrier lifetime

Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Mrinal K. Das, Brett A. Hull

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006

30

Generation-recombination noise in forward biased 4H-SiC p-n diodes

Rumyantsev, Sergey L., Dmitriev, Alexander P., Levinshtein, Michael E., Veksler, Dmitry, Shur, Michael S., Palmour, John W., Das, Mrinal K., Hull, Brett A.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 381 KB

english, 2006

31

Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride

Hull, Brett A., Mohney, Suzanne E., Chowdhury, Uttiya, Dupuis, Russell D., Gotthold, David, Birkhahn, Ronald, Pophristic, Milan

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 332 KB

english, 2002

32

Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation

Lichtenwalner, Daniel J., Dycus, J. Houston, Xu, Wei Zong, Lebeau, James M., Hull, Brett, Allen, Scott, Palmour, John W.

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 5.80 MB

english, 2017

33

[IEEE 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 ECCE-ASIA) - Hiroshima, Japan (2014.5.18-2014.5.21)] 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) - High switching performance of 1.7kV, 50A SiC power MOSFET over Si IGBT for advanced power conversion applications

Hazra, Samir, De, Ankan, Bhattacharya, Subhashish, Lin Cheng,, Palmour, John, Schupbach, Marcelo, Hull, Brett, Allen, Scott

Year:

2014

Language:

english

File:

PDF, 3.33 MB

english, 2014

34

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

Levinshtein, Michael E., Ivanov, Pavel A., Boltovets, Mykola S., Krivutsa, Valentyn A., Palmour, John W., Das, Mrinal K., Hull, Brett A.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 492 KB

english, 2006

35

Development of A 4H-SiC CMOS Inverter

Hull, Brett Adam, Ryu, Sei-Hyung, Fatima, Husna, Richmond, Jim, Palmour, John W., Scofield, James

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 135 KB

english, 2006

36

Resolving Atomic Scale Chemistry and Structure at NO and Ba Passivated SiC/SiO 2 Interfaces

Dycus, J. Houston, Xu, Weizong, Lichtenwalner, Daniel J., Hull, Brett, Palmour, John W., LeBeau, James M.

Journal:

Microscopy and Microanalysis

Year:

2016

Language:

english

File:

PDF, 734 KB

english, 2016

37

First Isolation of West Nile virus from a Patient with Encephalitis in the United States

Huang, Cinnia, Slater, Brett, Rudd, Robert, Parchuri, Nandakishore, Hull, Rene, Dupuis, Michelle, Hindenburg, Alexander

Journal:

Emerging Infectious Diseases

Year:

2002

Language:

english

File:

PDF, 490 KB

english, 2002

38

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

Hull, Brett A., Das, Mrinal K., Richmond, James, Heath, Bradley, Sumakeris, Joseph J., Geil, Bruce, Scozzie, Charles J.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 2.58 MB

english, 2006

39

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

Ryu, Sei Hyung, Lichtenwalner, Daniel J., van Brunt, Edward, Capell, Craig, O’Loughlin, Michael J., Jonas, Charlotte, Lemma, Yemane, Zhang, J., Richmond, Jim, Burk, Albert A., Hull, Brett, O’Brien, He

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 557 KB

english, 2017

40

Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET

Anurag, Anup, Gohil, Ghanshyamsinh, Acharya, Sayan, Han, Ki Jeong, Vechalapu, Kasunaidu, Baliga, B. Jayant, Bhattacharya, Subhashish, van Brunt, Edward, Sabri, Shadi, Hull, Brett, Grider, Dave

Journal:

Materials Science Forum

Year:

2018

Language:

english

File:

PDF, 1014 KB

english, 2018

41

Drift-free 10-kV, 20-A 4H-SiC PiN diodes

Brett A. Hull, Mrinal K. Das, Joseph J. Sumakeris, James T. Richmond, Sumi Krishnaswami

Journal:

Journal of Electronic Materials

Year:

2005

Language:

english

File:

PDF, 259 KB

english, 2005

42

The Effect of Complexity of the Surgical Field on Perioperative Outcomes of Robot-Assisted Radical Cystectomy

Elsayed, Ahmed S., Aldhaam, Naif A., Jing, Zhe, Osei, Jennifer A., Hull, Brett, Nagra, Avneet, Siam, Alat, Li, Qiang, Hussein, Ahmed A., Guru, Khurshid A.

Journal:

Year:

2020

File:

PDF, 247 KB

2020

43

High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

Michael E. Levinshtein, Pavel A. Ivanov, Mykola S. Boltovets, Valentyn A. Krivutsa, John W. Palmour, Mrinal K. Das, Brett A. Hull

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 352 KB

english, 2005

44

Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Hull, Brett A., Jonas, Charlotte, Ryu, Sei Hyung, Das, Mrinal K., O'Loughlin, Michael J., Husna, Fatima, Callanan, Robert, Richmond, Jim, Agarwal, Anant, Palmour, John W., Scozzie, Charles J.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 521 KB

english, 2009

45

Low Frequency Noise in 4H-SiC MOSFETs

Rumyantsev, Sergey L., Shur, Michael S., Levinshtein, Michael E., Ivanov, Pavel A., Palmour, John W., Das, Mrinal K., Hull, Brett A.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 464 KB

english, 2009

46

Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

Das, Mrinal K., Sumakeris, Joseph J., Hull, Brett A., Richmond, James

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 407 KB

english, 2006

47

Self-Heating of 4H-SiC PiN Diodes at High Current Densities

Levinshtein, Michael E., Mnatsakanov, Tigran T., Ivanov, Pavel A., Palmour, John W., Das, Mrinal K., Hull, Brett A.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 335 KB

english, 2009

48

Morphometric Variation in Marbled Murrelets, Brachyramphus Marmoratus, in British Columbia

Cindy L. Hull, Brett A. Vanderkist, Lynn W. Lougheed, Gary W. Kaiser and Fred Cooke

Journal:

Northwestern Naturalist

Year:

2001

Language:

english

File:

PDF, 1.04 MB

english, 2001

49

4H-SiC Trench Schottky Diodes for Next Generation Products

Zhang, Qing Chun Jon, Duc, Jennifer, Mieczkowski, Van, Hull, Brett, Allen, Scott, Palmour, John

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 627 KB

english, 2013

50

[IEEE 2016 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2016.10.9-2016.10.13)] 2016 IEEE International Integrated Reliability Workshop (IIRW) - SiC power device reliability

Gajewski, Donald A., Hull, Brett, Lichtenwalner, Daniel J., Ryu, Sei-Hyung, Bonelli, Eric, Mustain, Habib, Wang, Gangyao, Allen, Scott T., Palmour, John W.

Year:

2016

Language:

english

File:

PDF, 1.29 MB

english, 2016

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